The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1996
Filed:
Jun. 09, 1994
Frank J Morris, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An inverted thin film resistor structure comprises a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads (e.g. Al 36) overlaying a supporting layer (e.g. SiO.sub.2 32), an interlevel dielectric layer (e.g. SiO.sub.2 40) overlaying the supporting layer, and planarized so as to expose a top contact portion of the metallic interconnect leads, and an inverted thin film resistor (e.g. TaN 44) overlaying a portion of the planarized interlevel dielectric layer and overlaying the exposed top contact portions of the metallic interconnect leads. The novel inverted thin film resistor structure does not require a protective metal layer and does not require any vias in direct contact with the resistor. In addition, both the thin film resistor and the metallic interconnect can be formed with pattern and etch techniques.