The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1996
Filed:
Aug. 03, 1994
Richard LaRosa, S. Hempstead, NY (US);
Hazeltine Corporation, Greenlawn, NY (US);
Abstract
A local R.F. ground plane for high frequency active device. The R.F. grounded terminal of each active device is connected directly to its local R.F. ground plane. In the case of a transistor, there are common emitter, common base, or common collector circuits. The common electrode or terminal is connected directly to the local R.F. ground plane. In the case of a FET, the common electrode can be the source, gate or drain. In the case of a thermionic vacuum tube, the common electrode can be the cathode, grid or plate. In the case of a vacuum microelectronic device, the names are still evolving. The local R.F. ground is bypassed to the case of the package near the local R.F. input and/or output connections. This design permits double bond wires from the emitter to the local R.F. ground plane and eliminates parasitic oscillations where the potential oscillation frequency of the active device being protected is at least twice as great as the operating frequency of the package.