The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 1996

Filed:

Aug. 08, 1994
Applicant:
Inventors:

Yutaka Hirai, Tokyo, JP;

Yoshiyuki Osada, Yokosuka, JP;

Takashi Nakagiri, Tokyo, JP;

Katsunori Hatanaka, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 59 ; 257 61 ; 257 66 ; 257 72 ; 257350 ;
Abstract

In a semiconductor device comprising a wiring to be connected to the source region or the drain region of a thin film transistor, at least a portion of the wiring comprising a wiring part having the same cross-sectional structure as said source region or said drain region, and said wiring part being formed continuously with said source region or said drain region simultaneously with the respective end portions of said wiring portions, said source region and said drain region formed in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor.


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