The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1996
Filed:
Aug. 25, 1994
Kwong-Kit Choi, Tinton Falls, NJ (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A quantum grid infrared photodetector (QGIP) includes a semiconductor substrate with a quantum well infrared photodetector (QWIP) mounted thereon. The QWIP includes a lower contact layer formed on a planar surface of the substrate and a stack of alternate planar barrier layers and planar well layers sandwiched between the lower contact layer and an upper contact layer. The planes of the barrier layers and well layers are substantially parallel to the plane of the planar surface. A plurality of single-slit diffraction units are arranged as a grid in the stack for diffracting incident infrared radiation into a continuum of radiation components directed toward the well layers at different angles with respect to the planes of the well layers. The diffraction units are composed of cavities that extend through the barrier layers, the well layers and the upper contact layer. The cavities have rectangular, square and round shapes and are arranged in rows and columns to form the grid.