The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 1996
Filed:
Jan. 31, 1994
Schyi-yi Wu, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Compound semiconductor devices (10, 11) having isolation regions (37) under gate pads (24, 27) and a method of forming the compound semiconductor devices (10, 11). A surface protection layer (33) is formed on a compound semiconductor substrate (31). The surface protection layer (33) is patterned to form a plurality of islands (34). A field oxide (28) is formed on the regions of the compound semiconductor substrate (31) adjacent the plurality of islands (34) and surrounds active device regions (12, 13). Isolation regions (37) are formed around active device regions (12, 13). Control electrodes (21, 22) are formed in contact with the active device regions (12, 13) and extend over the field oxide (28). Source/drain regions (16, 17) are formed adjacent the control electrodes (21, 22). Source/drain electrodes (18, 19) are formed in contact with the source/drain regions (16, 17), thereby forming field effect transistors.