The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 1996
Filed:
Nov. 24, 1993
George K Celler, New Providence, NJ (US);
Lloyd R Harriott, Gillette, NJ (US);
Ratnaji R Kola, Berkeley Heights, NJ (US);
AT&T Corp., Murray Hill, NJ (US);
Abstract
The present invention provides a process for locally removing at least a portion of a material layer structure in which first and second materials are provided, the second material having a higher etch rate by an activated reaction gas than the first material. The second material is disposed over at least a portion of the first material. A reaction gas flows adjacent a portion of the second material to be removed. The reaction gas is chemically reactive with at least the second material to form volatile reaction products when activated by a focused particle beam, but does not spontaneously react with the second material. The portion of the second material to be removed is irradiated with a focused particle beam. Exemplary particle beams are focused ion beams and electron beams. The focused particle beam initiates a chemical reaction between the portion of the second material and the reaction gas, forming volatile reaction products which desorb from the substrate and are removed. This technique finds particular application for removal of opaque defects on tungsten absorber x-ray masks.