The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1996
Filed:
Jun. 14, 1994
Masao Ikeda, Kanagawa, JP;
Toyoharu Ohata, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
According to the present invention, a p-type ZnSe or p-type ZnSSe buffer layer is formed on a p-type GaAs substrate through at least single layer made of AlGaInP-based material and a II/VI-compound laser structure is formed on the p-type ZnSe or p-type ZnSSe buffer layer. Further, an AlGaAs-based buffer layer is provided between the substrate and the AlGaInP-based buffer layer. Further, the AlGaAs-based buffer layer has a composition expressed as Al.sub.0.5 Ga.sub.0.4 As and the AlGaInP-based buffer layer has a composition expressed as Al.sub.0.5 In.sub.0.5 P. Furthermore, a composition ratio x of Al in a buffer layer expressed as Al.sub.x Ga.sub.1-x As is modulated from 0 to 0.6 and a composition ratio y of Al in a buffer layer expressed as (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P is modulated from 0 to 1. According to the present invention, an operation voltage of the II/VI-compound semiconductor laser can be reduced and the green or blue color semiconductor laser of low operation voltage can be obtained. This semiconductor laser can continuously be operated at room temperature and also operated with a long life span.