The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1996
Filed:
Nov. 08, 1993
Hisaki Kato, Hamamatsu, JP;
Suenori Kimura, Hamamatsu, JP;
Kiyoshi Nakatsugawa, Hamamatsu, JP;
Tsuguo Uchino, Hamamatsu, JP;
Itsuo Ozawa, Hamamatsu, JP;
Hiroyuki Onda, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu, JP;
Abstract
The present invention relates to a linear multi-anode photomultiplier or electron multiplier on which a plurality of light beams to be measured or energy beams of electrons, ions and so forth are incident one-dimensionally. The object of the present invention is to prevent crosstalk between dynode arrays caused by leaking electrons. A transmission type photomultiplier is characterized in that the direction of secondary electron emission of the first-stage dynode of each dynode array is set in the opposite direction at 180.degree. from that of an adjacent dynode array. Then, adjacent dynode arrays will not oppose each other but are shifted from each other at a predetermined distance in the lateral direction. Accordingly, even if electrons leak from a gap between dynodes of a certain dynode array, the leaking electrons will not enter the adjacent dynode array, thereby preventing crosstalk.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile