The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1996
Filed:
Sep. 27, 1994
Chitra K Subramanian, Austin, TX (US);
Gerold W Neudeck, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A semiconductor-on-insulator (SOI) electronic device includes a monocrystalline semiconductor substrate and at least one trench therein. A trench insulating layer is provided on a bottom the trench for electrical isolation and a monocrystalline semiconducting region is also included in the trench, on the trench insulating layer. The semiconducting region preferably includes epitaxially overgrown silicon (EOS) which is grown from an exposed sidewall of the trench. An active region of the electronic device is also included in the semiconductor layer. Second, third, and additional active regions of the electronic device, if any, may also be included in the semiconducting region or in additional semiconducting regions which are provided in additional trenches. The semiconductor substrate may also include one or more active regions of the electronic device.