The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1996
Filed:
Nov. 30, 1994
Applicant:
Inventors:
Masayoshi Yano, Hitachinaka, JP;
Kohei Mochizuki, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
250283 ; 250281 ; 250282 ; 250397 ;
Abstract
Object To improve detecting sensitivity of negative ions. Construction A mass-filtered negative ion beam 22 is irradiated on a plate 24 after passing through a slit to emit neutral atoms 27, the neutral atoms 27 being ionized by an electron flow 33 after passing through a mesh electrode 30, the ion beam 35 ionized entering to a secondary electron multiplier to be amplified, then the amplified current entering to an amplifier 37 to be further amplified. Effects The detecting sensitivity can be improved more than ten times owing to the difference in existing amount of sputtering yield between neutral atoms and secondary ions.