The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1996
Filed:
Jun. 18, 1993
Young-Kwon Jun, Seoul, KR;
Goldstar Electron Co., Ltd., Cheongju, KR;
Abstract
A capacitor of a semiconductor memory cell having a maximized capacitance and a process for formation thereof are disclosed. The process is characterized in that a projected portion or a depressed portion is formed. Sets of polysilicon layers and silicon oxide layers are stacked over the projected or depressed portion. The sets of stacked layers are etched back, so that the layers having a slower etch rate remain in the form of multi-layer rims. An underlying silicon oxide layer is etched using the multi-layer rims as a mask to form a multi-layer cylinder. Then a polysilicon layer is deposited and etched back deeper than the thickness of the polysilicon layer. The silicon oxide layer is subjected to a wet etch to form a multi-layer cylindrical storage electrode. Then a dielectric layer and cell plate are formed on the storage electrode.