The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1996
Filed:
Apr. 17, 1995
Scott S Roth, Austin, TX (US);
William C McFadden, Austin, TX (US);
Alexander J Pepe, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for forming a vertical neuron MOSFET begins by providing a substrate (12). One or more conductive layers (24 and 28) are formed overlying the substrate (12). An opening (32) is formed through a portion of the conductive layers (24 and 28) to form one or more control electrodes from the conductive layers (24 and 28). A floating gate (36, and 38) is formed adjacent each of the control electrodes. A dielectric layer (34) is formed within the opening (32) and between the control electrodes and the floating gate (36, and 38) to provide for capacitive coupling between the control electrodes and the floating gate (36, and 38). The capacitive coupling may be altered for each control electrode via isotropic sidewall etching and other methods. By forming the neuron MOSFET in a vertical manner, a surface area of the neuron MOSFET is reduced when compared to known neuron MOSFET structures.