The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1995
Filed:
Dec. 27, 1993
Applicant:
Inventors:
Henry S Luftman, Emmaus, PA (US);
Roderick K Watts, Summit, NJ (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437163 ; 437160 ; 437950 ;
Abstract
The invention is directed to a process for fabricating a device with a junction thereon with a depth of 0.06 microns or less. The substrate also has a silicon dioxide material thereon. A dopant source is applied over a junction on the substrate. The substrate is then rapid thermal annealed to drive the dopant source into the substrate. The dopant source is then removed from the substrate using an etchant that does not contain a significant amount of HF.