The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1995
Filed:
Jul. 12, 1994
Hee-choul Park, Kyungki, KR;
Chul-min Jung, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor memory device which includes, in a first embodiment, a first PMOS transistor having a source electrode coupled to a signal transport line, a second PMOS transistor having a source electrode coupled to an inverted signal transport line, a drain electrode coupled to a gate electrode of the first PMOS transistor, and a gate electrode coupled to a drain electrode of the first PMOS transistor, a first current limiter connected between the drain electrode of the first PMOS transistor and a reference potential, a second current limiter connected between the drain electrode of the second PMOS transistor and the reference potential, a first constant current source connected between a supply voltage and the source electrode of the first PMOS transistor, and, a second constant current source connected between the supply voltage and the source electrode of the second PMOS transistor.