The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1995
Filed:
Jun. 03, 1994
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B / ;
U.S. Cl.
CPC ...
356381 ; 117 85 ;
Abstract
In a method for evaluating thickness of a semiconductor layer epitaxially growing on a main surface of a substrate, a parallel stripe-shaped ridges extending are formed on the surface of the substrate, and a semiconductor layer is epitaxially grown on the surface of the substrate including the stripe-shaped ridges while irradiating the stripe-shaped ridges with light and monitoring from the stripe-shaped ridges to evaluate the thickness of the epitaxially growing semiconductor layer. The thickness of the epitaxial layer is evaluated with high precision during the epitaxial growth process.