The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1995
Filed:
Mar. 17, 1993
Applicant:
Inventor:
Takanori Ozawa, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257214 ; 365182 ; 36518518 ; 257314 ; 257315 ; 257316 ; 257319 ; 257320 ; 257366 ;
Abstract
A pair of impurity regions are formed at a specified interval in a semiconductor substrate. A channel region is defined between the impurity regions. A select gate is provided on the channel region, and a sidewall for holding electric charge is provided along a side of the select gate. A tunnel insulating film is interposed between the sidewall for holding electric charge and the channel region. An insulating film covers the sidewall for holding electric charge. A control gate is provided on the insulating film lying over the sidewall. In such a structure, since the select gate can have a large cross-sectional area, speed-up of the reading can be attained.