The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 1995

Filed:

Mar. 14, 1994
Applicant:
Inventors:

Raghuthan Bharacharya, Littleton, CO (US);

Philip A Parilla, Lakewood, CO (US);

Richard D Blaugher, Evergreen, CO (US);

Assignee:

Midwest Research Institute, Kansas City, MO (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D / ; C25D / ;
U.S. Cl.
CPC ...
505472 ; 205 51 ; 205228 ; 205236 ; 505510 ; 505736 ;
Abstract

A process for preparing a superconducting film, such as a thallium-barium-calcium-copper oxide superconducting film, having substantially uniform phase development. The process comprises providing an electrodeposition bath having one or more soluble salts of one or more respective potentially superconducting metals in respective amounts adequate to yield a superconducting film upon subsequent appropriate treatment. Should all of the metals required for producing a superconducting film not be made available in the bath, such metals can be a part of the ambient during a subsequent annealing process. A soluble silver salt in an amount between about 0.1% and about 4.0% by weight of the provided other salts is also provided to the bath, and the bath is electrically energized to thereby form a plated film. The film is annealed in ambient conditions suitable to cause formation of a superconductor film. Doping with silver reduces the temperature at which the liquid phase appears during the annealing step, initiates a liquid phase throughout the entire volume of deposited material, and influences the nucleation and growth of the deposited material.


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