The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1995
Filed:
Aug. 04, 1994
Applicant:
Inventors:
Isao Nakatani, Ibaraki, JP;
Satoshi Takahashi, Ibaraki, JP;
Isao Nishida, Ibaraki, JP;
Kiyoshi Ozawa, Ibaraki, JP;
Assignees:
National Research Institute for Metals, Tokyo, JP;
National Space Development Agency of Japan, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 11 ; 117-1 ; 117-3 ; 117 49 ;
Abstract
A seed crystal is connected with a polycrystal at one end of the polycrystal, the connected crystal material is melted under a zero-gravity or microgravity environment without any container, and a single crystal is grown.
Nakatani, Isao. (1995). Method of production of single crystal (U.S. Patent No. 5476063). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5476063
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile