The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 1995
Filed:
Oct. 21, 1994
Seung-kee Yang, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki, KR;
Abstract
A manufacturing method of a semiconductor laser diode is disclosed in which a current cutoff layer is formed on the wall of a first metal layer by a low-temperature process such as plasma-enhanced chemical vapor deposition and the gas composition ratio of the reactive ion etching process is appropriately controlled so that the maximum area can be secured for a self-aligned first metal exposing area, i.e., an ohmic contact area. This minimizes the generation of heat during lasing and enhances reliability. Further, the present invention stabilizes the process by self alignment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile