The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 1995
Filed:
Jul. 26, 1994
Christian Hauswirth, Rufenach, CH;
Gerhard Hochstuhl, Waldshut-Tiengen, DE;
Bruno Hofstetter, Brugg, CH;
Markus Keller, Luterbach, CH;
ABB Management AG, Baden, CH;
Abstract
A method and a circuit arrangement having a device for measuring the depletion layer temperature of a GTO are specified. In this case, a measurement current (I.sub.M) is impressed in the gate circuit, and the voltage (U.sub.GR) between the cathode and gate is measured, with an applied measurement current (I.sub.M), after the transient turn-off processes have decayed. This voltage (U.sub.GR) is at this time dependent on the depletion layer temperature of the GTO. It thus becomes possible to measure the depletion layer temperature directly on the element, that is to say without circuitous routes via a heat sink temperature and calculation of the thermal resistance or the like, and during operation, continuously, and in consequence to monitor and control the stress level on the GTO precisely.