The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 1995
Filed:
Jun. 13, 1994
Applicant:
Inventor:
Shigeru Morita, Fujisawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257519 ; 257513 ; 257398 ;
Abstract
A semiconductor device has a nobel configuration. The device includes a semiconductor substrate, element isolation regions formed on the main surface of the semiconductor substrate and at least one element region formed on the main surface of the semiconductor substrate and enclosed by the element isolation regions. In the device, the depth of each trench from the main surface to the bottom of the semiconductor substrate is shallow at a region where the trench width is less than a specified length, and it is deep at a region where the trench width is larger than the specified length.