Burn-in circuit and method therefor of semiconductor memory device

Abstract

The present invention pertains to semiconductor memory devices and more particularly to a burn-in circuit of such devices and burn-in method which improve reliability of a static random access memory RAM. The semiconductor memory device according to the present invention, which includes a memory cell array in which a plurality of memory cells are stored in the directions of row and column, a row decoder for selecting the row of the memory cell array, and a column decoder for selecting the column of the memory cell array, comprises an input/output line control circuit formed between a data input/output pin disposed on the same chip and the column of the memory cell array for transmitting data inputted/outputted through the data input/output pin, a read/write control circuit for supplying a signal which controls input/output of data in the memory cell array to the input/output line control circuit, and a burn-in control circuit for inputting the output signal of the read/write control circuit, supplying a burn-in signal responsive to the data input through the input/output line control circuit to the row decoder and column decoder, and enabling a burn-in test of the same chip after a package process.