The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 1995

Filed:

Apr. 22, 1994
Applicant:
Inventors:

Lakshmi N Sankaranarayanan, Eindhoven, NL;

Jan W Slotboom, Eindhoven, NL;

Arjen G Van Der Sijde, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365177 ; 365182 ; 257133 ; 257374 ; 257378 ; 257379 ; 257386 ; 257399 ; 257585 ;
Abstract

A semiconductor device having a programmable memory cell which includes a bipolar transistor of which a base region (13) can be provided with a base current through a control transistor (7, 8, 9, 10). The bipolar transistor has an emitter region (12) connected to a first supply line (151) and has a collector region (14) connected to a second supply line (152) through a load (16). A constant potential difference is maintained between the two supply lines (151, 152) during operation. The collector region (14) is laterally electrically insulated and provides a feedback to the control transistor in such a manner that, during operation within a certain voltage domain, a change in the voltage difference between the emitter region (12) and the collector region (14) leads to an opposite change in the conductivity through the control transistor.


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