The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Jul. 14, 1994
Tadayoshi Murakami, Hamamatsu, JP;
Hideo Takahashi, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu, JP;
Abstract
A substrate consisting of a compound semiconductor crystal, a buffer layer, a graded layer, a light-absorbing layer having a lattice constant smaller than that of the uppermost mixed crystal sublayer of the graded layer, a p-type conductive layer, another p-type conductive layer, and a capping layer formed on the surface of the light-absorbing layer next to the p-type conductive layer and having almost the same lattice constant as that of the uppermost layer of the graded layer are stacked. An electrode is connected to the substrate, and another electrode is connected to the conductive layer. A tensile force is applied to the light-absorbing layer from the uppermost mixed crystal sublayer of the graded layer, the capping layer, and the conductive layer, thereby suppressing a dark current.