The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Sep. 01, 1993
Applicant:
Inventor:
Yasutaka Kohno, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257108 ; 257254 ; 257280 ; 257284 ; 257412 ; 257473 ; 437 40 ; 437 44 ; 437176 ; 437203 ; 437228 ; 437235 ;
Abstract
In a field effect transistor including a Schottky gate electrode disposed on an active region in a compound semiconductor substrate, a compressive stress of the gate electrode and a tensile stress of an insulating film serving as a passivation are concentrated on the lower edges of the gate electrode, whereby positive piezoelectric charges are produced in the compound semiconductor substrate in the vicinity of the gate electrode. The positive piezoelectric charges increase the effective donor concentration, reducing the thickness of the surface depletion layer. As the result, channel narrowing due to the surface depletion layer is suppressed.