The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 1995

Filed:

Feb. 13, 1995
Applicant:
Inventors:

Yoshinori Shimada, Yamatokoriyama, JP;

Naofumi Kondo, Nara, JP;

Takehisa Sakurai, Kusatsu, JP;

Yoshiharu Kataoka, Suita, JP;

Manabu Takahama, Tenri, JP;

Mikio Katayama, Ikomo, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 57 ; 257379 ; 257537 ;
Abstract

A thin-film transistor circuit for a logic gate circuit includes: an amorphous silicon layer; a driver transistor having a source region, a drain region, and a channel region, the source, drain, and channel regions being formed in the amorphous silicon layer; and a load device formed in the amorphous silicon layer and made of n.sup.- amorphous silicon, the load device being connected to the driver transistor.


Find Patent Forward Citations

Shimada, Yoshinori. (1995). Thin-film transistor circuit having an amorphous silicon load and a (U.S. Patent No. 5471070). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5471070

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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