The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Feb. 28, 1994
Masayoshi Tsuji, Tokyo, JP;
Kikuo Makita, Tokyo, JP;
NEC Corporation, , JP;
Abstract
On a p-type InP substrate 12, there are provided a p-type InGaAs light absorptive layer 14 and an InAlAs/InGaAs superlattice avalanche multiplier layer 15. By selecting the composition of the well layer and the barrier layer of the avalanche multiplier layer 15, a strain is applied to at least one of them so that the difference .DELTA. Ec between the energies at the lower end of the conduction band of the well layer and/or the barrier layer is increased, or the difference .DELTA. Ev between the energies at the upper end of the valence band of the well layer and/or the barrier layer is decreased, and/or the effective mass of the hole within the well layer and/or barrier layer is decreased. Thus, the ionization factor ratio is further improved, or the pile-up of the hole is alleviated, or the traveling time of the hole is shortened to achieve an avalanche multiplier semiconductor photodetector having a wide bandwidth, low noise and high response characteristic.