The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Jul. 25, 1994
Applicant:
Inventor:
Jung J Kim, Seoul, KR;
Assignee:
Goldstar Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 29 ; 437 84 ;
Abstract
A process for the preparation of a thin film transistor is provided which includes sequentially depositing a gate insulating layer, an amorphous silicon layer, and an n+ amorphous silicon layer. The n+ amorphous silicon layer is disposed between source and drain electrodes and is oxidized by a plasma oxidation process so that switching properties, interface properties between the amorphous silicon layer and the n+ amorphous silicon layer and a production yield are enhanced, while the preparation steps of forming an etch stopper and removing the n+ amorphous silicon layer disposed between the source electrode and the drain electrode are reduced.