The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Oct. 14, 1994
Takahiro Nakamoto, Itami, JP;
Tetsuya Yagi, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device having a gate electrode having a leg with two mutually offset portions is formed by successively depositing on a semiconductor substrate an amorphous material and a crystalline metal layer. A portion of the crystalline metal layer is removed photolithographically and the amorphous material is etched to form a hole extending to the semiconductor substrate. The through hole is filled when a second amorphous material is deposited on the crystalline metal layer. A second hole is photolithographically prepared in the second amorphous material, partially aligned with the first hole and filled with a gate electrode material, and thereafter the second amorphous material, crystalline metal layer, and original amorphous material are removed, leaving a gate electrode having a leg with mutually offset portions.