The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Nov. 10, 1994
Applicant:
Inventors:
Chang-jip Yang, Suwon, KR;
Jun-gyo Jung, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
4272554 ; 4272481 ; 427255 ; 4272557 ; 4273977 ; 4274193 ; 437239 ; 437941 ; 437952 ;
Abstract
In a method for forming a compound oxide film such as a gate oxide film of a MOS device, after a first oxide film (such as a HTO film) is formed on a semiconductor substrate by deposition at a high temperature, a second oxide film is formed below the first oxide film by wet oxidizing the surface of the semiconductor substrate, which results in a compound oxide film consisting of the HTO film and the wet oxide film. Therefore, a high quality oxide film having excellent electrical characteristics can be formed.