The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Aug. 20, 1993
Applicant:
Inventors:
Yuji Mochizuki, Tokyo, JP;
Yoshie Chiba, Tokyo, JP;
Toshikazu Takada, Tokyo, JP;
Akira Usui, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 97 ; 117 99 ; 117102 ; 117103 ;
Abstract
Epitaxial growth is carried out to form crystal such as GaAs, Si, etc. by using GaCl, SiCl.sub.2, etc. In the epitaxial growth, Cl atoms are left on the crystal growth surface. The Cl atoms are removed in the form of HCl molecules by vibrationally-excited H.sub.2 molecules.
Mochizuki, Yuji. (1995). Method for epitaxial growth of semiconductor crystal by using halogenide (U.S. Patent No. 5469806). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5469806
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile