The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 1995
Filed:
Nov. 16, 1993
Applicant:
Inventors:
John E Cunningham, Lincroft, NJ (US);
Keith W Goossen, Aberdeen, NJ (US);
William Y Jan, Scotch Plains, NJ (US);
James A Walker, Howell, NJ (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437241 ; 385129 ; 385130 ; 385131 ; 385132 ; 385 14 ;
Abstract
A technique is described for the preparation of a thin film of a silicon nitride diffusion barrier to gallium on a silicon integrated circuit chip. The technique involves reacting nitrogen and silane in a ratio of 53:1 to 300:1 in a plasma enhanced chemical vapor deposition apparatus. The described technique is of interest for use in the monolithic integration of interconnected GaAs/AlGaAs double heterostructures, modulators and silicon MOSFET structures.