The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 1995

Filed:

Oct. 29, 1992
Applicant:
Inventors:

Masaru Yuki, Fukuyama, JP;

Kenichi Tanaka, Fukuyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257344 ; 257346 ; 257408 ;
Abstract

A semiconductor device including a substrate of a first conductivity type, a gate electrode laminated thereon and a source and drain region of a second conductivity type formed in self-alignment manner in an upper portion of the substrate outside the gate electrode, the conductor device further including a high concentration layer of the first conductivity type in a channel region between the source and the drain and a low concentration layer of the first conductivity type between the high concentration layer and the source and drain region.


Find Patent Forward Citations

Yuki, Masaru. (1995). Transistor having source-to-drain nonuniformly-doped channel and method (U.S. Patent No. 5466957). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5466957

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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