The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1995
Filed:
Jun. 30, 1994
Paul T Moody, Oldham, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor body (2) has first and second major surfaces (2c and 2d) with a first region (2b) of one conductivity type adjacent the first major surface (2c). An insulated gate field effect transistor (6) is formed within the first region (2c) and has source and drain electrodes (S and D) and an insulated gate electrode (G). At least one further component (R4) is coupled between the insulated gate electrode (G) of the insulated gate field effect transistor (6) and a gate input terminal (GT). The further region requires a second region (21) of the opposite conductivity type provided within the first region (2b) so that a region (26) of the further component (R4), the second region (21) and the first region (2b) form a parasitic bipolar transistor (B). An insulating layer (30) on the first major surface (2c) carries a first rectifying element (D1) coupled between the base region (8) of the parasitic bipolar transistor (B) and the gate input terminal (GT) and a second rectifying element (D2) coupled between the emitter region (26) of the parasitic bipolar transistor (B) and the gate input terminal (GT) for causing, when the voltage difference between the source and insulated gate electrodes (S and G) reverses sign, the first and second rectifying elements (D1 and D2) in series with the base and emitter regions of the parasitic bipolar transistor (B) to become forward-biassed to reduce the voltage between the base and emitter regions of the parasitic bipolar transistor (B) to inhibit turn-on of the parasitic bipolar transistor.