The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1995
Filed:
Mar. 09, 1994
Jong M Choi, Seoul, KR;
Goldstar Electron Co., Ltd., , US;
Abstract
A method for fabricating a thin film transistor including the steps of forming a gate electrode on a substrate; successively depositing a gate insulation layer and a semiconductor layer on the substrate; forming sidewall from semiconductor layer on both said surfaces of the gate electrode by an anisotropic dry etching process; and implanting ions into the semiconductor sidewall. The grain boundaries in the source and drain junctions but not parallel to the channel. prevent leakage current. Thus, the on-to-off current ratio is improved and the device can be designed with a reduced cell size having no off-set margins.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile