The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 1995
Filed:
Jul. 07, 1993
Philippe Meunier, Aix-en-Provence, FR;
Antoine Pavlin, Puyricard, FR;
SGS-Thomson Microelectronics S.A., Saint-Genis, FR;
Abstract
A circuit protects a power transistor of the vertical MOS or IGTB-type during the off state against forward overvoltages. The protection circuit includes a first circuit for limiting the voltage across the transistor to a predetermined voltage, lower than the forward breakdown voltage of the power transistor, a circuit for detecting the quantity of energy dissipated in the transistor when the first circuit is enabled, and a second circuit for turning the transistor on at low impedance. The second circuit is enabled when the detection circuit has detected that the dissipated energy has exceeded a predetermined energy threshold.