The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 1995
Filed:
Mar. 01, 1994
Eray S Aydil, Summit, NJ (US);
Konstantinos P Giapis, Short Hills, NJ (US);
Richard A Gottscho, Maplewood, NJ (US);
AT&T IPM Corp., Coral Gables, FL (US);
Abstract
Applicants have discovered that gallium arsenide surfaces can be dry passivated without heating or ion bombardment by exposing them downstream to ammonia plasma formation. Specifically, a workpiece having exposed gallium arsenide surfaces is passivated by placing the workpiece in an evacuable chamber, evacuating in the chamber, generating an ammonia plasma removed from the immediate vicinity of the workpiece, and causing the plasma products to flow downstream into contact with the workpiece. Preferably the plasma gas pressure is 0.5 to 6.0 Torr, the substrate temperature is less than 100.degree. C. and the time of exposure is in excess of 5 min. The plasma should be generated at a location sufficiently removed from the workpiece that the workpiece surface is not bombarded with ions capable of damaging the surface (more than about 10 cm) and sufficiently close to the workpiece that reactive plasma products exist in the flow (within about 30 cm). The workpiece should also not be placed within line-of-sight of the plasma to avoid radiation (UV, visible and X-ray) induced damage. The result is fast, stable, room temperature passivation, compatible with clustered dry processing techniques for integrated circuit manufacture.