The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 1995
Filed:
Jul. 25, 1994
Applicant:
Inventors:
Subramanian S Iyer, Yorktown Heights, NY (US);
Richard D Thompson, Lake Peekskill, NY (US);
King-Ning Tu, Chappaqua, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257757 ; 257520 ; 257621 ; 257190 ; 257768 ; 257755 ;
Abstract
An epitaxial conductor and a method for forming buried conductor patterns is described incorporating a layer of single crystalline silicon, a pattern formed therein such as a trench, a layer of metal silicide epitaxial formed on the bottom surface of the pattern or trench, a layer of silicon epitaxially formed thereover, and a layer of metal silicide epitaxially formed over the silicon layer. The invention overcomes the problem of twinning defects in the top surface of epitaxial silicide layers.