The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 1995
Filed:
Jan. 10, 1995
Applicant:
Inventor:
Madhav Mehra, Rochester, NY (US);
Assignee:
Eastman Kodak Company, Rochester, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437200 ; 437194 ;
Abstract
A method where WSi.sub.x films are used to contact heavily doped, n.sup.+ regions in a silicon substrate. The doped regions are formed by ion implantation of an impurity such as arsenic (As). The deposited WSi.sub.x film is annealed prior to the deposition of the aluminum interconnect. This anneal is carried out at typical dopant activation conditions. The procedure results in unexpectedly low resistance for small contact areas of less than 1.7 .mu.m.sup.2 when the WSi.sub.x film has a thickness of between 1000 .ANG. and 2500 .ANG..