Method of making a confined planar charge coupled device with edge

Abstract

A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform first insulative dielectric layer; then depositing and patterning in the form of a trench extending to the first insulative layer a second insulative layer; then implanting ions of a second conductivity type into the substrate, then patterning closely spaced strips of a first conductive layer on the first and second insulative layer, then further implanting ions of a second conductivity type in the regions between said first conductive strips, then depositing uniformly a second conductive layer electrically isolated from the first conductive strips, then entirely removing by uniform planarization those portions of the second conductive layer disposed over regions of the first conductive strips or over regions of the second insulative layer so as to form closely spaced, coplanar, alternating first and second electrically isolated conductive strips, then electrically connecting alternate pairs of strips by a planar process of depositing and oxidizing a conductive material, then removing portions of the second insulative layer.