The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 1995
Filed:
Aug. 29, 1994
Applicant:
Inventors:
Gordon Tam, Gilbert, AZ (US);
Pak M Tam, Gilbert, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 44 ; 437 45 ; 437150 ; 437913 ; 437933 ; 437953 ; 257341 ; 257412 ; 257328 ;
Abstract
A method for making a stable low threshold voltage p-channel power MOSFET device having a p-type gate layer (14) includes incorporating a p-type dopant into the gate layer (14) formed over a gate oxide layer (13). The p-type dopant is incorporated within the gate layer (14) under conditions that minimize diffusion of p-type dopant through the gate oxide layer (13) into the channel regions (31, 32). The process reduces the number of process steps necessary to manufacture a power MOSFET device.