The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 1995

Filed:

Apr. 15, 1991
Applicant:
Inventor:

Hiroshi Hikichi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518909 ; 365205 ; 327 56 ; 327537 ;
Abstract

A memory device has memory cells each of which is addressed according to a timing signal, current sense amplifiers each of which determines whether a current flows in the addressed memory cell or not and reads-out the data stored in such memory cell, a circuit which generates a control signal to become active at a timing when the memory cell Is addressed and to become inactive after the read-out of the stored data is completed by the current sense amplifier, and a circuit which cuts-off based on the control signal a current path of a steady-state current flowing in the current sense amplifier. It is possible to substantially reduce power consumption without sacrificing the capability of the read-out the stored data at a high speed.


Find Patent Forward Citations

Hikichi, Hiroshi. (1995). Memory device with current path cut-off circuit for sense amplifier (U.S. Patent No. 5459689). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5459689

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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