The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Feb. 04, 1993
Kenichi Ishiguro, Tenri, JP;
Hirohisa Tanaka, Ikoma, JP;
Sharp Kabushiki Kaisha, , JP;
Abstract
A parasitic capacitance is not caused between a shielding film and a gate line and between a pixel electrode and the gate line in a liquid crystal display of the present invention because the shielding film and the pixel electrode do not overlap the gate lines. The display characteristics are thus improved. Furthermore, since the counter shielding film is formed so as to cover a smaller gap of one between the shielding film and the gate line and one between the gate line and pixel electrode, light leak through the gap can be blocked. The shielding film can be small because it only covers the gap, thereby preventing a degradation of an aperture ratio. Moreover, a degradation of yield caused by increasing a number of production steps is also prevented because the production steps are not complicated. In another aspect of the liquid crystal display of the present invention, since the gate line is electrically connected to a counter electrode, a part of the parasitic capacitance caused between the pixel electrode and the shielding film end between the pixel electrode and the gate line is connected in parallel to a capacitance of liquid crystal and used as a storage capacitance. As a result, the parasitic capacitance less influences on the display characteristics, which is thus further improved. Further, since storage capacitance lines are not required, the aperture rate is not degraded and a degradation of yield caused by increasing a number of the production steps is prevented.