Double gate semiconductor device and control device thereof

Abstract

A semiconductor device thyristor structure includes a first conductive type collector region, second conductive type and first conductive type base regions, and a second conductive type emitter region. First conductive type regions and second conductive type regions have respective first and second type majority carriers. A first MOSFET injects the second type majority carriers into the second conductive type base region. A second MOSFET is opened and closed independent of the first MOSFET and extracts the first type majority carriers from the first conductive type base region. A third MOSFET has a first gate electrode which is also a gate electrode of the first MOSFET, for extracting the first type majority carriers from the first conductive type base region. First conductive type and second conductive type emitter regions are formed within the first conductive type base region and an emitter voltage can be simultaneously applied to these emitter regions. The first conductive type emitter region is formed within the second conductive type emitter region. A second gate electrode of the second MOSFET is formed on the surface of the first conductive type emitter region, the second conductive type emitter region and the first conductive type base region through a gate insulating film. The first gate electrode of the first and third MOSFET is formed on the surface of the first conductive type emitter region, the second conductive type emitter region, the first conductive type base region and the second conductive type base region through a gate insulating film.