The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Sep. 20, 1994
Mitra Dutta, Matawan, NJ (US);
Michael A Stroscio, Durham, NC (US);
Vladimir V Mitin, Ferndale, MI (US);
Rimvydas Mickevicius, Hamtramck, MI (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A quantum wire embedded in another material or a quantum wire which is free standing. Specifically, the quantum wire structure is fabricated such that a quantum well semiconductor material, for example Gallium Arsenide (GaAS), is embedded in a quantum barrier semiconductor material, for example Aluminum Arsenide (AlAs). Preferably, the entire quantum wire structure is engineered to form multiple subbands and is limited to a low dimensional quantum structure. The dimensions of the quantum wire structure are preferably around 150.times.250 .ANG.. This structure has a negative absolute conductance at a predetermined voltage and temperature. As a result of the resonant behavior of the density of states, the rates of electron scattering in the passive region (acoustic phonon and ionized impurity scattering as well as absorption of optical phonons) decrease dramatically as the electron kinetic energy increases.