The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Mar. 31, 1994
Applicant:
Inventor:
Thomas F Carruthers, Laurel, MD (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 17 ; 257 21 ; 257 22 ; 257184 ;
Abstract
A semiconductor photodetector employs a multilayer structure for controlling speed, efficiency and noise. A light-absorbing low band gap semiconductor emitter layer produces photogenerated charge upon absorption of light. A semiconductor collector layer collects the photogenerated charge. A semiconductor barrier layer between the light absorbing layer and the collector layer selectively blocks substantially all but photogenerated charge. A base layer may be optionally employed between the barrier layer and the collector layer for gating the current flow and controlling wavelength sensitivity.