The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Feb. 03, 1994
Shigekazu Izumi, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a laminated structure including a GaAs layer and an InGaAs layer grown on the GaAs layer and through which operating current flows perpendicular to the InGaAs layer. The InGaAs layer includes a plurality of very thin GaAs layers through which most of the operating current passes by tunneling, located within the InGaAs layer and spaced apart at intervals larger than a critical thickness at which a pseudomorphic state of an InGaAs crystal grown on a GaAs crystal is maintained. Therefore, segregation of In atoms, i.e., unfavorable movement of In atoms, toward the surface of the growing InGaAs crystal, that occurs when the InGaAs layer is grown at a high temperature, and loss of In atoms is suppressed by the very thin GaAs layers. Thus, the InGaAs layer can be grown on the GaAs layer at a high temperature without degrading the surface morphology of the InGaAs layer. An InGaAs layer with improved surface morphology, reduced contact resistance and sheet resistivity, and an improved uniformity of this resistance and resistivity in a wafer can be grown.