The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Jul. 29, 1993
Tsukasa Doi, Kitakatsuragi, JP;
Yukiko Mori, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a semiconductor device manufacturing process which enables film deposition at low temperatures and can produce an interlayer insulating film of good quality which exhibits good surface smoothing effect. In the TEOS-O.sub.3 system normal pressure CVD process, film growth is carried out by adding to TEOS source a source containing nitrogen in its composition. For the source is used heptamethyl disilazane (chemical formula (CH.sub.3).sub.3 SiN(CH.sub.3)Si(CH.sub.3).sub.3), N, O-bis-trimethylsilyl acetamide (chemical formula (CH.sub.3)C(OSi(CH.sub.3).sub.3)(NSi(CH.sub.3).sub.3)) or tridimethylamino silane (chemical formula (CH.sub.3).sub.2 N).sub.3 SiN). Also, there is provided a semiconductor device manufacturing method which enables film deposition at a uniform growth rate irrespective of the substrate material and can produce a silicon oxide film of good quality which exhibits good surface smoothing effect. An organic source having an Si--N bond in its composition and O.sub.3 are conducted to the substrate and reacted with each other under normal pressure whereby a silicon oxide film is grown on the substrate. The organic source is, for example, hexamethyl disilazane ((CH.sub.3).sub.3 Si--N(H)--Si(CH.sub.3 ).sub.3).