The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Jul. 05, 1994
Suresh Venkatesan, Austin, TX (US);
Stephen Poon, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
An improved planarization process includes the steps of forming recessed regions (38) and elevated regions (34) in a semiconductor substrate (30). The substrate is oxidized to form an oxide liner (39) overlying the recessed regions, and a fill material (40) is deposited to overlie the substrate (30) filling the recessed regions (38). An etching process is used to remove portions of the fill material (40) and to expose portions of a first planarization layer (44) overlying the elevated regions (34) of the substrate (30). The fill material is etched and a second planarization layer (46) is deposited to overlie dielectric portions (42), and portions (44) of first planarization layer (32) exposed by the etching process. A chemical-mechanical-polishing process is then carried out to form a planar surface (47), and remaining portions of the planarization layers and fill material are removed.