The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Aug. 09, 1994
Sa K Rha, Seoul, KR;
Youngil Cheon, Nowon-gu, KR;
Goldstar Electron Co., Ltd., Cheongju, KR;
Abstract
A method for making semiconductor thin film transistors (TFTs) having a bottom gate such that the gate electrode is formed of a polysilicon layer with a rugged surface, thereby providing a TFT which has a high on/off current ratio. According to the present invention, a thin film transistor may have a substrate; a gate electrode having a rugged surface formed on the substrate; a gate insulating layer formed on the gate electrode and the substrate; a semiconductor layer formed over the gate insulation layer; impurity regions formed at opposite sides of the gate electrode in the semiconductor layer. A method for making a thin film transistor according to present invention may include the steps of: forming a gate electrode having a rugged surface on a substrate; forming an insulating layer and a semiconductor layer on the substrate and the gate electrode; forming impurity regions at opposite sides of the gate electrode in the semiconductor layer.